TESTING OF TRANSMITTER CHIP (aether1/2)

A test chip (aether1) was submitted for fabrication by Orbit Semiconductor in their 1.2µ, double-poly CMOS process in July 1994. The major components in this chip include:

DEVELOPMENT SYSTEM

A system for exercising the aether1 chip was designed and fabricated. It consists of several parts: This development system was designed to be used like the one that controls our existing lab-bench Localizers. Code is written in C, cross-compiled for the Motorola 68332 processor on a PC, and up-loaded over the fiber optic link. A "smart" terminal emulator runs under Microsoft Windows. It adds a layer of symbolic debugging on top of the ROM debugger built into the MC68332 development board. Using the Windows OS allows us to communicate with several development boards at the same time in different terminal windows, as well as running the cross-compiler in its own window.

The COB daughterboard was fabricated with polyamide so that the aether1 chip could be epoxied in a cavity and gold wire ball-bonded directly to the board. This eliminates the lead inductance of a chip package and minimizes the wire bond inductance, especially for the transmitter driver outputs. The transmitter antenna is clamped directly to gold-plated contacts on this board.

FABRICATION PROBLEMS

On 12 September 1994, we were notified by Orbit Semiconductor that they had scrapped the run for the aether1 chip we submitted in July due to their own processing problems. On 22 September, we were notified that they had scrapped the backup run for the aether1 chip. Fortunately, we had submitted a slightly revised version of this chip (aether2) in August, but the net result was that we did not see first silicon on this design until 19 October.

For noise isolation, we designed the aether2 chip with five sets of separate supply pins for different sections of the chip. Of the twelve chips we received from Orbit, every one had at least one of the five separate sets of supply pins shorted together. The problem was not in the design, because we were able to exercise all of the different sections on at least some of the chips. By forcing current through the shorted supply pins, we were able to identify the cause of the shorts as contacts to poly2 over poly1. These contacts are perfectly permissible by MOSIS scaleable rules as supported by Orbit, but apparently their process wasn't up to specifications, since the poly2 contacts were punching through the thin oxide separating poly1 and poly2. Even for the sections on particular chips that did not have their supplies shorted, our testing results were questionable, since many of our circuits used isolated poly1/poly2 capacitors.

We had Orbit test the 24 instances of aether2 that were on their backup wafers. The results were the same. At least one of the five separate sets of supply pins was shorted on each of the chips. In consultation with one of their process engineers, we also learned that they were modifying our mask layouts in a manner that could lead to design rule violations. To match MOSIS scaleable rules to their design rules, they were performing bloats of certain mask layers in a naïve manner. In addition, they were doing high temperature metal processing which forced metal1 busses to "squirt" through vias to metal2, thereby causing shorts on the metal2 layer.

We would have switched to another fabricator for our chips, but Orbit Semiconductor is the only choice for multi-project wafer runs in a 1.2µ analog CMOS process with floating capacitors. Instead, we modified our design rules (and our physical layout) to compensate for their processing problems. One, we disallowed contacts to poly2 over poly1. Two, we bloated our mask layers the same as Orbit, and then checked for spacing violations using Orbit's design rules. Since this is a more conservative check, our layouts are still scaleable, and can be fabricated by other foundries that may support MOSIS scaleable rules.

ANTENNA DRIVERS

Even though we were not able to feed the antenna drivers from the code sequence generator on the aether2 chip, we were able to separately test the antenna drivers using externally generated waveforms. The first result was that our latchup protection measures proved sufficient. From voltage and current measurements, we were able to estimate the driver sink resistance at 0.6 ohms and the source resistance at 1.3 ohms, which compares favorably with our simulations. Dynamic measurements into 1 ohm loads showed currents up to 2 amps, rise times of 650 ps (through the P-channel drivers), and fall times of 500 ps (through the N-channel drivers).
 
 
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